Prof. Dr. Michael Seibt

Main Affiliation
 
Staff Status
unigoe
 

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  • 2022 Journal Article | 
    ​ ​Nucleation of Nickel Disilicide Precipitates in Float‐Zone Silicon: The Role of Vacancies​
    Saring, P.; Abrosimov, N. V. & Seibt, M. ​ (2022) 
    physica status solidi (a), art. 2200220​.​ DOI: https://doi.org/10.1002/pssa.202200220 
    Details  DOI 
  • 2022 Journal Article
    ​ ​Novel semi‐transparent solar cell based on ultrathin multiple Si/Ge quantum wells​
    Meddeb, H.; Götz‐Köhler, M.; Flathmann, C.; Seibt, M. ; Gehrke, K. & Vehse, M.​ (2022) 
    Progress in Photovoltaics, art. pip.3665​.​ DOI: https://doi.org/10.1002/pip.3665 
    Details  DOI 
  • 2021 Journal Article | Research Paper
    ​ ​Site-specific plan-view TEM lamella preparation of pristine surfaces with a large field of view​
    Meyer, T. ; Westphal, T.; Kressdorf, B. ; Ross, U.; Jooss, C.   & Seibt, M. ​ (2021) 
    Ultramicroscopy228 art. S0304399121001054​.​ DOI: https://doi.org/10.1016/j.ultramic.2021.113320 
    Details  DOI 
  • 2021 Journal Article
    ​ ​Recombination and Charge Collection at Nickel Silicide Precipitates in Silicon Studied by Electron Beam‐Induced Current​
    Saring, P. & Seibt, M. ​ (2021) 
    physica status solidi (b), pp. 2100142​.​ DOI: https://doi.org/10.1002/pssb.202100142 
    Details  DOI 
  • 2021 Journal Article | Research Paper | 
    ​ ​Phase Transitions in a Perovskite Thin Film Studied by Environmental In Situ Heating Nano‐Beam Electron Diffraction​
    Meyer, T. ; Kressdorf, B. ; Roddatis, V. V. ; Hoffmann, J. ; Jooss, C.   & Seibt, M. ​ (2021) 
    Small methods, art. 2100464​.​ DOI: https://doi.org/10.1002/smtd.202100464 
    Details  DOI 
  • 2020 Journal Article | Research Paper | 
    ​ ​Room-Temperature Hot-Polaron Photovoltaics in the Charge-Ordered State of a Layered Perovskite Oxide Heterojunction​
    Kressdorf, B. ; Meyer, T. ; Belenchuk, A.; Shapoval, O.; ten Brink, M.; Melles, S. & Ross, U. et al.​ (2020) 
    Physical Review Applied14(5).​ DOI: https://doi.org/10.1103/PhysRevApplied.14.054006 
    Details  DOI 
  • 2020 Journal Article | Research Paper | 
    ​ ​Environmental transmission electron microscopy study of hydrogen charging effect on a Cu-Zr metallic glass​
    Tian, L.; Yang, Y.-Q.; Meyer, T. ; Tönnies, D.; Roddatis, V. ; Voigt, H. & Zhao, X.-A. et al.​ (2020) 
    Materials Research Letters8(12) pp. 439​-445​.​ DOI: https://doi.org/10.1080/21663831.2020.1791273 
    Details  DOI 
  • 2020 Journal Article | 
    ​ ​Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer range​
    Spende, H.; Margenfeld, C.; Meyer, T. ; Clavero, I. M.; Bremers, H.; Hangleiter, A. & Seibt, M.  et al.​ (2020) 
    Semiconductor Science and Technology35(3) pp. 035006​.​ DOI: https://doi.org/10.1088/1361-6641/ab6ac0 
    Details  DOI 
  • 2019 Journal Article | Research Paper | 
    ​ ​A posteriori synchronization of scanning transmission electron microscopy signals with kilopixel per second acquisition rates​
    Meyer, T. ; Lopatin, S.; Seibt, M.   & Roddatis, V. ​ (2019) 
    Ultramicroscopy200 pp. 62​-66​.​ DOI: https://doi.org/10.1016/j.ultramic.2019.02.020 
    Details  DOI 
  • 2019 Journal Article | Research Paper | 
    ​ ​High-resolution Scanning Transmission EBIC Analysis of Misfit Dislocations at Perovskite pn-Heterojunctions​
    Meyer, T. ; Kressdorf, B. ; Lindner, J.; Peretzki, P. ; Roddatis, V. ; Jooss, C.   & Seibt, M. ​ (2019) 
    Journal of Physics: Conference Series1190(1) art. 012009​.​ DOI: https://doi.org/10.1088/1742-6596/1190/1/012009 
    Details  DOI 
  • 2018 Journal Article
    ​ ​Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN​
    Medvedev, O.; Vyvenko, O.; Ubyivovk, E.; Shapenkov, S.; Bondarenko, A.; Saring, P. & Seibt, M. ​ (2018) 
    Journal of Applied Physics123(16) pp. 161427​.​ DOI: https://doi.org/10.1063/1.5011368 
    Details  DOI 
  • 2018 Journal Article
    ​ ​Concerning vacancy defects generated by moving dislocations in Si​
    Kveder, V.; Khorosheva, M. & Seibt, M. ​ (2018) 
    Materials Today. Proceedings5(6) pp. 14757​-14764​.​ DOI: https://doi.org/10.1016/j.matpr.2018.03.065 
    Details  DOI 
  • 2018 Journal Article
    ​ ​Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation​
    Wang, N.; Fricke-Begemann, T.; Peretzki, P. ; Ihlemann, J. & Seibt, M. ​ (2018) 
    Journal of Applied Physics123(9) pp. 093104​.​ DOI: https://doi.org/10.1063/1.5019404 
    Details  DOI 
  • 2017 Journal Article | Research Paper
    ​ ​Low energy scanning transmission electron beam induced current for nanoscale characterization of p-n junctions​
    Peretzki, P. ; Ifland, B. ; Jooss, C.   & Seibt, M. ​ (2017) 
    physica status solidi (RRL) - Rapid Research Letters11(1) art. 1600358​.​ DOI: https://doi.org/10.1002/pssr.201600358 
    Details  DOI  WoS 
  • 2017 Journal Article | Research Paper | 
    ​ ​Contribution of Jahn-Teller and charge transfer excitations to the photovoltaic effect of manganite/titanite heterojunctions​
    Ifland, B. ; Hoffmann, J. ; Kressdorf, B. ; Roddatis, V. ; Seibt, M.   & Jooss, C. ​ (2017) 
    New Journal of Physics19 art. 063046​.​ DOI: https://doi.org/10.1088/1367-2630/aa6c22 
    Details  DOI  WoS 
  • 2016 Journal Article | Research Paper
    ​ ​Designing deoxidation inhibiting encapsulation of metal oxide nanostructures for fluidic and biological applications​
    Ghosh, M.; Ghosh, S.; Seibt, M. ; Schaap, I. A. T. ; Schmidt, C.   & Rao, G. M.​ (2016) 
    Applied Surface Science390 pp. 924​-928​.​ DOI: https://doi.org/10.1016/j.apsusc.2016.08.117 
    Details  DOI  WoS 
  • 2016 Journal Article | Research Paper
    ​ ​Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111)​
    Kashammer, P.; Borgardt, N. I.; Seibt, M.   & Sinno, T.​ (2016) 
    Surface Science651 pp. 100​-104​.​ DOI: https://doi.org/10.1016/j.susc.2016.04.002 
    Details  DOI  WoS 
  • 2016 Journal Article
    ​ ​Study of the Structure and Composition of the Strained Epitaxial Layer in the InAlAs/GaAs(100) Heterostructure by Transmission Electron Microscopy​
    Lovygin, M. V.; Bugaev, A. S.; Volkov, R. L.; Seibt, M.   & Borgardt, N. I.​ (2016) 
    Semiconductors50(13) pp. 1753​-1758​.​ DOI: https://doi.org/10.1134/S1063782616130066 
    Details  DOI  WoS 
  • 2016 Journal Article
    ​ ​The influence of the atomic structure of basal planes on interplanar distance in pyrolytic carbon materials​
    Prihodko, A. S.; Seibt, M.   & Borgardt, N. I.​ (2016) 
    Technical Physics Letters42(12) pp. 1137​-1140​.​ DOI: https://doi.org/10.1134/S106378501612004X 
    Details  DOI  WoS 
  • 2016 Journal Article | Research Paper
    ​ ​Light-Controlled Interconversion between a Self-Assembled Triangle and a Rhombicuboctahedral Sphere​
    Han, M.; Luo, Y.; Damaschke, B.; Gomez, L.; Ribas, X.; Jose, A. & Peretzki, P. et al.​ (2016) 
    Angewandte Chemie International Edition55(1) pp. 445​-449​.​ DOI: https://doi.org/10.1002/anie.201508307 
    Details  DOI  PMID  PMC  WoS 
  • 2015 Journal Article | Research Paper
    ​ ​Phonon localization in ultrathin layered structures​
    Doering, F.; Eberl, C. ; Schlenkrich, S.; Schlenkrich, F. ; Hoffmann, S.; Liese, T.   & Krebs, H.-U.  et al.​ (2015) 
    Applied Physics A119(1) pp. 11​-18​.​ DOI: https://doi.org/10.1007/s00339-015-9037-z 
    Details  DOI  WoS 
  • 2015 Journal Article | Research Paper
    ​ ​Growth mechanisms of GaN microrods for 3D core-shell LEDs: The influence of silane flow​
    Hartmann, J.; Wang, X.; Schuhmann, H.; Dziony, W.; Caccamo, L.; Ledig, J. & Mohajerani, M. S. et al.​ (2015) 
    physica status solidi (a)212(12) pp. 2830​-2836​.​ DOI: https://doi.org/10.1002/pssa.201532316 
    Details  DOI  WoS 
  • 2015 Conference Paper | 
    ​ ​Spin-Transfer Torque Switching at Ultra Low Current Densities​
    Leutenantsmeyer, J. C.; Zbarsky, V.; Ehe, M. von der; Wittrock, S.; Peretzki, P. ; Schuhmann, H. & Thomas, A. et al.​ (2015)
    MATERIALS TRANSACTIONS56(9) pp. 1323​-1326. ​2nd International Symposium on Nano Materials, Technology and Applications (NANOMATA)​, Hanoi, VIETNAM.
    Sendai​: Japan Inst Metals. DOI: https://doi.org/10.2320/matertrans.MA201570 
    Details  DOI  WoS 
  • 2015 Journal Article | Research Paper | 
    ​ ​Current-voltage characteristics of manganite-titanite perovskite junctions​
    Ifland, B. ; Peretzki, P. ; Kressdorf, B. ; Saring, P.; Kelling, A.; Seibt, M.   & Jooss, C. ​ (2015) 
    Beilstein Journal of Nanotechnology6 pp. 1467​-1484​.​ DOI: https://doi.org/10.3762/bjnano.6.152 
    Details  DOI  PMID  PMC  WoS 
  • 2014 Journal Article
    ​ ​Photoluminescence of Carbon Nanodots: Dipole Emission Centers and Electron–Phonon Coupling​
    Ghosh, S.; Chizhik, A. M. ; Karedla, N. ; Dekaliuk, M. O.; Gregor, I. ; Schuhmann, H. & Seibt, M.  et al.​ (2014) 
    Nano Letters14(10) pp. 5656​-5661​.​ DOI: https://doi.org/10.1021/nl502372x 
    Details  DOI 
  • 2010 Journal Article | Research Paper
    ​ ​Tailored Synthetic Polyamines for Controlled Biomimetic Silica Formation​
    Bernecker, A.; Wieneke, R.; Riedel, R.; Seibt, M. ; Geyer, A. & Steinem, C. ​ (2010) 
    Journal of the American Chemical Society132(3) pp. 1023​-1031​.​ DOI: https://doi.org/10.1021/ja9061163 
    Details  DOI  PMID  PMC  WoS 
  • 2005 Conference Paper
    ​ ​Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon​
    Vyvenko, O. F.; Bazlov, N. V.; Trushin, M. V.; Nadolinski, A. A.; Seibt, M. ; Schroter, W. & Hahn, G.​ (2005)
    Solid State Phenomena108/109 pp. 279​-284. ​11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005)​, Giens, FRANCE.
    Zurich-uetikon​: Trans Tech Publications Ltd.
    Details  WoS 
  • 2001 Journal Article
    ​ ​Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers​
    Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Huang, Y.-L.; Seibt, M.   & Lieb, K.-P.​ (2001) 
    Journal of Applied Physics90(9) pp. 4474​-4484​.​
    Details  WoS 

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